a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982 - 1200 fax (818) 765 - 3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 3.0 ma 45 v bv ceo i c = 3.0 ma 12 v bv ebo i e = 3.0 ma 3.5 v h fe v ce = 5.0 v i c = 600 ma 15 150 --- c ob v cb = 28 v f = 1.0 mhz 7.0 pf p g h h c v cc = 28 v p out = 10 w f = 1.65 ghz 11 45 db % npn silicon rf power transistor ASAT10 description: the asi ASAT10 is designed for features: input matching network omnigold ? metalization system maximum ratings i c 2.3 a v cbo 45 v v ceo 15 v v ebo 3.5 v p diss 29 w @ t c = 25 o c t j - 65 o c to +200 o c t stg - 65 o c to +150 o c q q jc 6. 0 o c/w package style .250 2 l flg(a) order code: asi10517 minimum inches / mm .055 / 1.40 .635 / 16.13 .124 / 3.15 .243 / 6.17 .739 / 18.77 b c d e f g a maximum .253 / 6.43 .749 / 19.02 .665 / 16.89 inches / mm .065 / 1.65 h .002 / 0.05 .006 / 0.15 dim k l i j .055 / 1.40 .075 / 1.91 .245 / 6.22 .065 / 1.65 .095 / 2.41 .255 / 6.48 .315 / 8.00 .325 / 8.26 .190 / 4.83 k j i l m b .050 x 45 ? .130 nom. h g f e c d .020 x 45 a .555 / 14.10 .565 / 14.35 m .092 / 2.34
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